The 2N7000 N-Channel enhancement MOSFETs are designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The 2N7000 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch.
- Rugged and reliable.
- High saturation current capability.
|Maximum Continuous Drain Current||0.3A|
|Maximum Drain Source Resistance||5Ohm@10V|
|Maximum Drain Source Voltage||60V|
|Maximum Gate Source Voltage||±30V|
|Typical Input Capacitance @ Vds||40pF@10V|
|Minimum Operating Temperature||-55°C|
|Maximum Operating Temperature||150°C|
|Maximum Power Dissipation||830mW|