2N7000-mosfet

2N7000 N-Channel MOSFET

Availability: 29 in stock

Sku: COM-040

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Quick Overview

The 2N7000 N-Channel enhancement MOSFETs are designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.

29 in stock

Quantity

GHS 1.00

Overview

The 2N7000 N-Channel enhancement MOSFETs are designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The 2N7000 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

  • High density cell design for low RDS(ON)
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.

Specifications

Channel Type N
Maximum Continuous Drain Current 0.3A
Maximum Drain Source Resistance [email protected]
Maximum Drain Source Voltage 60V
Category Power MOSFET
Maximum Gate Source Voltage ±30V
Typical Input Capacitance @ Vds [email protected]
Minimum Operating Temperature -55°C
Maximum Operating Temperature 150°C
Mounting Through Hole
Pin_Count 3
Product Type MOSFET
Maximum Power Dissipation 830mW

Resources 

Datasheet

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